Verkkokauppa
SFS-EN 62979:2017:en
Photovoltaic module - Bypass diode - Thermal runaway test
Soveltamisala
Suomenkielistä soveltamisalaa ei ole saatavissa.
IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
Tämän julkaisun valmistelusta Suomessa vastaa SESKO ry, puh. 050 571 6048.
IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
Tämän julkaisun valmistelusta Suomessa vastaa SESKO ry, puh. 050 571 6048.
Tuoteryhmä(t)
Sidokset
Velvoittavat viittaukset
IEC/TS 61836:2016 Solar photovoltaic energy systems - Terms, definitions and symbols
Tekninen komitea
Vahvistuspäivä
10.11.2017
Julkaisupäivä
14.11.2017
Painos
1
Sivumäärä
17
Julkaisun kieli
englanti