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IEC TS 62804-1:2015 ed1.0 (2015-08)

Photovoltaic (PV) modules - Test methods for the detection of potential-induced degradation - Part 1: Crystalline silicon

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Soveltamisala
IEC TS 62804-1:2015(E) defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress including potential-induced degradation (PID). Two test methods are defined that do not inherently produce equivalent results. They are given as screening tests; neither test includes all the factors existing in the natural environment that can affect the PID rate. The methods describe how to achieve a constant stress level. The testing in this Technical Specification is designed for crystalline silicon PV modules with one or two glass surfaces, silicon cells having passivating dielectric layers, for degradation mechanisms involving mobile ions influencing the electric field over the silicon semiconductor, or electronically interacting with the silicon semiconductor itself.
Tuoteryhmä(t)
27.160 Solar energy engineering »
Sidokset
Velvoittavat viittaukset
IEC 60068-2-78:2012 Environmental testing – Part 2-78: Tests – Test Cab: Damp heat, steady state
IEC 60410 Sampling plans and procedures for inspection by attributes
IEC 61215:2005 Crystalline silicon terrestrial photovoltaic (PV) modules – Design qualification and type approval
Tekninen komitea
IEC/TC 82 Solar photovoltaic energy systems »
Vahvistuspäivä
06.08.2015
Julkaisupäivä
06.08.2015
Painos
1.0
Sivumäärä
15
Julkaisun kieli
englanti

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